QM3016S MOSFET. Datasheet pdf. Equivalent
Type Designator: QM3016S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 31.6 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SOP-8
QM3016S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM3016S Datasheet (PDF)
qm3016s.pdf
QM3016S N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 15Afor most of the synchronous buck converter applications . Applications The QM3016S meet the RoHS and Green Product requirement 100% E
qm3016m3.pdf
QM3016M3/N3 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016M3/N3 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 30V 4m 80Agate charge for most of the synchronous buck converter applications . Applications The QM3016M3/N3 meet the RoHS and Green High Frequency
qm3016am6.pdf
QM3016AM6 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016AM6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 30V 4m 108Acharge for most of the synchronous buck converter applications . Applications The QM3016AM6 meet the RoHS and Green Product requiremen
qm3016m6.pdf
QM3016M6 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 108Afor most of the synchronous buck converter applications . Applications The QM3016M6 meet the RoHS and Green Product requirement 1
qm3016p.pdf
QM3016P N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 120Afor most of the synchronous buck converter applications . Applications The QM3016P meet the RoHS and Green Product requirement 100%
qm3016u.pdf
QM3016U N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 93Afor most of the synchronous buck converter applications . Applications The QM3016U meet the RoHS and Green Product requirement 100% E
qm3016n3.pdf
QM3016N3 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 80Afor most of the synchronous buck converter applications . Applications The QM3016N3 meet the RoHS and Green Product requirement 10
qm3016ad.pdf
QM3016AD N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016AD is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 100Afor most of the synchronous buck converter applications . Applications The QM3016AD meet the RoHS and Green Product requirement 1
qm3016d.pdf
QM3016D N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 4m 96Afor most of the synchronous buck converter applications . Applications The QM3016D meet the RoHS and Green Product requirement 100%
qm3016m6.pdf
QM3016M6www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE MAX
qm3016d.pdf
QM3016Dwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RU55200Q | IXFH20N80Q
History: RU55200Q | IXFH20N80Q
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