QM3206S
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM3206S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 8.6
nS
Cossⓘ -
Output Capacitance: 267
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
SOP-8
QM3206S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM3206S
Datasheet (PDF)
..1. Size:342K ubiq
qm3206s.pdf 
QM3206S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3206S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 6m 30V 13A for most of the synchronous buck converter applications . Applications The QM3206S meet the RoHS and Green Product requirement
9.1. Size:367K ubiq
qm3203s.pdf
QM3203S Dual P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3203S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 25m -6.5Afor most of the synchronous buck converter applications . Applications The QM3203S meet the RoHS and Green Product requireme
9.2. Size:306K ubiq
qm3202m3.pdf
QM3202M3 Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3202M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 18m 30V 28A for most of the synchronous buck converter applications . Applications The QM3202M3 meet the RoHS and Green Product require
9.3. Size:344K ubiq
qm3208s.pdf
QM3208S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 25m 6.2Afor most of the synchronous buck converter applications . Applications The QM3208S meet the RoHS and Green Product requirement
9.4. Size:352K ubiq
qm3202s.pdf
QM3202S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3202S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 18m 30V 7.3A for most of the synchronous buck converter ns applications . Applicatio The QM3202S meet the RoHS and Green Product requi
9.5. Size:353K ubiq
qm3201s.pdf
QM3201S Dual P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3201S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 45m -6Afor most of the synchronous buck converter applications . Applications The QM3201S meet the RoHS and Green Product requirement
Datasheet: WPB4002
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