QM3303S MOSFET. Datasheet pdf. Equivalent
Type Designator: QM3303S
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP-8
QM3303S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM3303S Datasheet (PDF)
qm3303s.pdf
QM3303S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3303S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 30V 25m 7.5Acharge for most of the synchronous buck converter -30V 62m -5Aapplications . The QM3303S meet the RoHS and Green Product
qm3302s.pdf
QM3302S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3302S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 10.5m 30V 9.5A charge for most of the synchronous buck converter -30V 25m -6.5Aapplications . The QM3302S meet the RoHS and Green Pro
qm3301s.pdf
QM3301S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3301S is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 30V 20m 10Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter -30V 45m 6Aapplications . Applications The QM3301S meet the RoHS and Gre
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