QM3807M6 Datasheet. Specs and Replacement

Type Designator: QM3807M6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70.6 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PRPAK5X6

QM3807M6 substitution

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QM3807M6 datasheet

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QM3807M6

QM3807M6 Dual N-Ch Fast Switching MOSFETs General Description Product Summery The QM3807M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 9m 57A for most of the synchronous buck converter 30V 4m 83A applications . The QM3807M6 meet the RoHS and Green Applications Product... See More ⇒

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QM3807M6

QM3809M6 Dual N-Ch Fast Switching MOSFETs General Description Product Summery The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , CH BVDSS RDSON ID which provide excellent RDSON and gate charge Die1 30V 9m 57A for most of the synchronous buck converter Die2 30V 5.5m 72A applications . The QM3809M6 meet the RoHS and Green A... See More ⇒

 9.2. Size:384K  ubiq
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QM3807M6

QM3802S Dual N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3802S is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , Die 1 10m 30V 10A which provide excellent RDSON and gate charge for most of the synchronous buck converter Die 2 7m 30V 12A applications . Applications The QM3802S meet the Ro... See More ⇒

Detailed specifications: QM3208S, QM3214S, QM3301S, QM3302S, QM3303S, QM3403K, QM3404K, QM3802S, IRF3205, QM3809M6, QM4001D, QM4001S, QM4002AD, QM4002D, QM4002S, QM4003D, QM4003S

Keywords - QM3807M6 MOSFET specs

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