All MOSFET. QM3807M6 Datasheet

 

QM3807M6 Datasheet and Replacement


   Type Designator: QM3807M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70.6 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PRPAK5X6
 

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QM3807M6 Datasheet (PDF)

 ..1. Size:380K  ubiq
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QM3807M6

QM3807M6 Dual N-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3807M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 9m 57Afor most of the synchronous buck converter 30V 4m 83Aapplications . The QM3807M6 meet the RoHS and Green Applications Product

 9.1. Size:383K  ubiq
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QM3807M6

QM3809M6 Dual N-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , CH BVDSS RDSON ID which provide excellent RDSON and gate charge Die1 30V 9m 57Afor most of the synchronous buck converter Die2 30V 5.5m 72Aapplications . The QM3809M6 meet the RoHS and Green A

 9.2. Size:384K  ubiq
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QM3807M6

QM3802S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3802S is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , Die 1 10m 30V 10A which provide excellent RDSON and gate charge for most of the synchronous buck converter Die 2 7m 30V 12A applications . Applications The QM3802S meet the Ro

Datasheet: QM3208S , QM3214S , QM3301S , QM3302S , QM3303S , QM3403K , QM3404K , QM3802S , IRF3205 , QM3809M6 , QM4001D , QM4001S , QM4002AD , QM4002D , QM4002S , QM4003D , QM4003S .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - QM3807M6 MOSFET datasheet

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