QM3809M6 MOSFET. Datasheet pdf. Equivalent
Type Designator: QM3809M6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.6 nC
trⓘ - Rise Time: 70.6 nS
Cossⓘ - Output Capacitance: 194 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PRPAK5X6
QM3809M6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM3809M6 Datasheet (PDF)
qm3809m6.pdf
QM3809M6 Dual N-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , CH BVDSS RDSON ID which provide excellent RDSON and gate charge Die1 30V 9m 57Afor most of the synchronous buck converter Die2 30V 5.5m 72Aapplications . The QM3809M6 meet the RoHS and Green A
qm3802s.pdf
QM3802S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3802S is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , Die 1 10m 30V 10A which provide excellent RDSON and gate charge for most of the synchronous buck converter Die 2 7m 30V 12A applications . Applications The QM3802S meet the Ro
qm3807m6.pdf
QM3807M6 Dual N-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM3807M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 9m 57Afor most of the synchronous buck converter 30V 4m 83Aapplications . The QM3807M6 meet the RoHS and Green Applications Product
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MSU11N50Q | HGD290N10SL | SI2312CDS
History: MSU11N50Q | HGD290N10SL | SI2312CDS
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918