All MOSFET. QM6006F Datasheet

 

QM6006F MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM6006F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.3 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220F

 QM6006F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM6006F Datasheet (PDF)

 ..1. Size:334K  ubiq
qm6006f.pdf

QM6006F
QM6006F

QM6006F N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006F is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 30Afor most of the synchronous buck converter applications . Applications The QM6006F meet the RoHS and Green Product requirement , 10

 8.1. Size:314K  ubiq
qm6006p.pdf

QM6006F
QM6006F

QM6006P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006P meet the RoHS and Green Product requirement , 10

 8.2. Size:224K  ubiq
qm6006m6.pdf

QM6006F
QM6006F

QM6006M6 N-Ch 60V Fast Switching MOSFETs General Description Product Summary The QM6006M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 40A for most of the synchronous buck converter applications . Applications The QM6006M6 meet the RoHS and Green Product requirement

 8.3. Size:312K  ubiq
qm6006d.pdf

QM6006F
QM6006F

QM6006D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 35Afor most of the synchronous buck converter applications . Applications The QM6006D meet the RoHS and Green Product requirement , 100

 8.4. Size:347K  ubiq
qm6006s.pdf

QM6006F
QM6006F

QM6006S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 6.3Afor most of the synchronous buck converter applications . Applications The QM6006S meet the RoHS and Green Product requirement , 10

 8.5. Size:302K  ubiq
qm6006b.pdf

QM6006F
QM6006F

QM6006B N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006B meet the RoHS and Green Product requirement , 10

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top