QM6008G
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM6008G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 7.2
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT-223
QM6008G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM6008G
Datasheet (PDF)
..1. Size:331K ubiq
qm6008g.pdf 
QM6008G N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.8Afor most of the small power switching and load switch applications. Applications The QM6008G meet the RoHS and Green Product requ
8.1. Size:342K ubiq
qm6008d.pdf
QM6008D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008D meet the RoHS and Green Product requirement , 10
8.2. Size:344K ubiq
qm6008s.pdf
QM6008S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3Afor most of the synchronous buck converter applications . Applications The QM6008S meet the RoHS and Green Product requirement , 100
8.3. Size:343K ubiq
qm6008u.pdf
QM6008U N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008U meet the RoHS and Green Product requirement , 10
8.4. Size:304K ubiq
qm6008k.pdf
QM6008K N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.3Afor most of the small power switching and load switch applications. Applications The QM6008K meet the RoHS and Green Product requ
8.5. Size:341K ubiq
qm6008p.pdf
QM6008P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 14Afor most of the synchronous buck converter applications . Applications The QM6008P meet the RoHS and Green Product requirement , 10
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
