QM6204S
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM6204S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.56
nC
trⓘ - Rise Time: 14.2
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
SOP-8
QM6204S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM6204S
Datasheet (PDF)
..1. Size:340K ubiq
qm6204s.pdf
QM6204S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8Afor most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement
9.1. Size:340K ubiq
qm6208s.pdf
QM6208S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5Afor most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen
9.2. Size:353K ubiq
qm6208v.pdf
QM6208V Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5Afor most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme
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