QM6208S Datasheet and Replacement
Type Designator: QM6208S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.5 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP-8
QM6208S substitution
QM6208S Datasheet (PDF)
qm6208s.pdf

QM6208S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5Afor most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen
qm6208v.pdf

QM6208V Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5Afor most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme
qm6204s.pdf

QM6204S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8Afor most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement
Datasheet: QM6015S , QM6016D , QM6016F , QM6016P , QM6016S , QM6020AP , QM6020P , QM6204S , SKD502T , QM6208V , QM6214Q , QM6214S , QM6301S , QM7018AD , QM7020P , QM8014D , QM8014U .
History: HY18N20T | 2SK888 | WMN30N80M3 | 2SJ605-Z | 2SK943 | SFF240J | BUZ83
Keywords - QM6208S MOSFET datasheet
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History: HY18N20T | 2SK888 | WMN30N80M3 | 2SJ605-Z | 2SK943 | SFF240J | BUZ83



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