QM8014U Datasheet. Specs and Replacement

Type Designator: QM8014U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-251

QM8014U substitution

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QM8014U datasheet

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QM8014U

QM8014U N-Ch 80V Fast Switching MOSFETs General Description Product Summery The QM8014U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8A for most of the synchronous buck converter applications . Applications The QM8014U meet the RoHS and Green Product requirement , ... See More ⇒

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QM8014U

QM8014D N-Ch 80V Fast Switching MOSFETs General Description Product Summery The QM8014D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8A for most of the synchronous buck converter applications . Applications The QM8014D meet the RoHS and Green Product requirement , ... See More ⇒

Detailed specifications: QM6208S, QM6208V, QM6214Q, QM6214S, QM6301S, QM7018AD, QM7020P, QM8014D, IRFZ24N, QM8205V, QN7002, QS5K2, QS5U12, QS5U13, QS5U16, QS5U17, QS5U21

Keywords - QM8014U MOSFET specs

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