All MOSFET. QM8014U Datasheet

 

QM8014U Datasheet and Replacement


   Type Designator: QM8014U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-251
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QM8014U Datasheet (PDF)

 ..1. Size:347K  ubiq
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QM8014U

QM8014U N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM8014U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8Afor most of the synchronous buck converter applications . Applications The QM8014U meet the RoHS and Green Product requirement ,

 8.1. Size:350K  ubiq
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QM8014U

QM8014D N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM8014D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8Afor most of the synchronous buck converter applications . Applications The QM8014D meet the RoHS and Green Product requirement ,

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ215CH | IPB60R280P6 | PHP36N06E | NCE60P05BY | SIHFIB6N60A | 2SK1152L | BSO080P03NS3G

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