QS5U33 Datasheet and Replacement
Type Designator: QS5U33
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: TSMT5
QS5U33 substitution
QS5U33 Datasheet (PDF)
qs5u33.pdf

QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U33 combines Pch MOSFET with 0~0.1(1) (2) (3)a Schottky barrier diode in TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3) Low voltage d
qs5u36.pdf

QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TSMT5Schottky Barrier DIODE Features 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.5V). Each lead has same dimensions4) The Independentl
qs5u34.pdf

QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U34 combines Nch MOSFET with a 0~0.1(1) (2) (3)Schottky barrier diode in a single TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3)
Datasheet: QS5U12 , QS5U13 , QS5U16 , QS5U17 , QS5U21 , QS5U23 , QS5U26 , QS5U27 , P0903BDG , QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 .
History: IPP80P04P4-07 | STB20NM50-1 | CS8N60U
Keywords - QS5U33 MOSFET datasheet
QS5U33 cross reference
QS5U33 equivalent finder
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QS5U33 replacement
History: IPP80P04P4-07 | STB20NM50-1 | CS8N60U



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