All MOSFET. QS8J11 Datasheet

 

QS8J11 Datasheet and Replacement


   Type Designator: QS8J11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TSMT8
 

 QS8J11 substitution

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QS8J11 Datasheet (PDF)

 ..1. Size:2308K  rohm
 qs8j11.pdf pdf_icon

QS8J11

QS8J11Datasheet-12V Pch +Pch Middle Power MOSFETlOutlinel TSMT8VDSS -12VRDS(on)(Max.) 43m ID 3.5A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) -1.5V Drive.3) Built-in G-S protection diode.4) Small surface mount package(TSMT8)5) Pb-free

 9.1. Size:2759K  rohm
 qs8j13.pdf pdf_icon

QS8J11

QS8J13Datasheet-12V Pch+Pch Middle Power MOSFETlOutlinel TSMT8VDSS-12VRDS(on)(Max.) 22m ID 5.5A PD1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package .3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPack

 9.2. Size:2604K  rohm
 qs8j12.pdf pdf_icon

QS8J11

QS8J12Datasheet-12V Pch+Pch Middle Power MOSFETlOutlinel TSMT8VDSS -12VRDS(on)(Max.) 29m ID 4.5A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) -1.5V Drive.3) Built-in G-S Protection Diode.4) Small Surface Mount Package (TSMT8).5) Pb-fre

Datasheet: QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , AO4468 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 .

History: PE532DY | OSG60R1K8PF

Keywords - QS8J11 MOSFET datasheet

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