2N6758JANTX Datasheet. Specs and Replacement

Type Designator: 2N6758JANTX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 30 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3

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2N6758JANTX datasheet

 8.1. Size:147K  international rectifier
2n6758 irf230.pdf pdf_icon

2N6758JANTX

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒

 8.2. Size:141K  fairchild semi
2n6757 2n6758.pdf pdf_icon

2N6758JANTX

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 9.1. Size:147K  international rectifier
2n6756 irf130.pdf pdf_icon

2N6758JANTX

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒

 9.2. Size:136K  fairchild semi
2n6755 2n6756.pdf pdf_icon

2N6758JANTX

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Detailed specifications: 2N6756JAN, 2N6756JANTX, 2N6756JANTXV, 2N6756JTX, 2N6756JTXV, 2N6757, 2N6758, 2N6758JAN, 13N50, 2N6758JANTXV, 2N6758JTX, 2N6758JTXV, 2N6759, 2N6760, 2N6760JAN, 2N6760JANTX, 2N6760JANTXV

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