RFH45N06 Datasheet and Replacement
Type Designator: RFH45N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 310 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-218AC
RFH45N06 substitution
RFH45N06 Datasheet (PDF)
Datasheet: QS8M51 , RFH25N18 , RFH25N20 , RFH25P08 , RFH25P10 , RFH35N08 , RFH35N10 , RFH45N05 , IRFB4227 , RFK25P08 , RFK25P10 , RFK35N08 , RFK35N10 , RFM10N12 , RFM10N15 , RFM12N08 , RFM12N08L .
History: STB21NM50N | GSM6424
Keywords - RFH45N06 MOSFET datasheet
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History: STB21NM50N | GSM6424



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