RFM8P10 Datasheet. Specs and Replacement
Type Designator: RFM8P10
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-204AA
RFM8P10 substitution
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RFM8P10 datasheet
Detailed specifications: RFM15N06L, RFM15N12, RFM15N15, RFM25N05, RFM25N06, RFM5P12, RFM5P15, RFM8P08, SPP20N60C3, RFP10N12, RFP10N15, RFP12N08, RFP12N08L, RFP12N10, RFP12N18, RFP12N20, RFP15N12
Keywords - RFM8P10 MOSFET specs
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