RJK03M1DPA Specs and Replacement

Type Designator: RJK03M1DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: WPAK

RJK03M1DPA substitution

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RJK03M1DPA datasheet

 ..1. Size:133K  renesas
 rjk03m1dpa.pdf pdf_icon

RJK03M1DPA

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3m max. R07DS0765EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 08, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam... See More ⇒

 8.1. Size:181K  renesas
 rjk03m3dpa.pdf pdf_icon

RJK03M1DPA

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9m max. R07DS0767EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam... See More ⇒

 8.2. Size:125K  renesas
 rjk03m5dns.pdf pdf_icon

RJK03M1DPA

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 29, 2012 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-... See More ⇒

 8.3. Size:148K  renesas
 rjk03m4dpa.pdf pdf_icon

RJK03M1DPA

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6m max. R07DS0768EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam... See More ⇒

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Detailed specifications: RJK005N03T146, RJK0323JPD, RJK0329DPB-00, RJK0329DPB-01, RJK0331DPB-00, RJK0331DPB-01, RJK0369DSP, RJK0371DSP, P60NF06, RJK03M2DPA, RJK03M3DPA, RJK03M4DPA, RJK03M5DNS, RJK03M5DPA, RJK0406JPE, RJK0601DPN-E0, RJK0602DPN-E0

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.