RJK0703DPP-E0 MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0703DPP-E0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 830 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: TO-220FP
RJK0703DPP-E0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0703DPP-E0 Datasheet (PDF)
rjk0703dpp-e0.pdf
Preliminary Datasheet RJK0703DPP-E0 R07DS0630EJ0200N-Channel MOS FET Rev.2.0075 V, 70 A, 6.7 m Oct 15, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Abs
rjk0703dpn-e0.pdf
Preliminary Datasheet RJK0703DPN-E0 R07DS0624EJ0200N-Channel MOS FET Rev.2.0075 V, 70 A, 6.7 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4. D
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