RJK1002DPP-E0 MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK1002DPP-E0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO-220FP
RJK1002DPP-E0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK1002DPP-E0 Datasheet (PDF)
rjk1002dpp-e0.pdf
Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200N-Channel MOS FET Rev.2.00100 V, 70 A, 7.6 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Ab
rej03g1627 rjk1008dpnds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk1008dpp-e0.pdf
Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100N-Channel Power MOSFET Rev.1.00Jun 08, 2012High-Speed Switching Use Features VDSS : 100 V RDS(on) : 11 m (Max) ID : 80 A Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)2D1. Gate2. Drain1 G3. Source12 S33Application Motor control, Lighting control, Solenoid
rej03g1708 rjk1008dppds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk1001dpp-e0.pdf
Preliminary Datasheet RJK1001DPP-E0 R07DS0625EJ0200N-Channel MOS FET Rev.2.00100 V, 80 A, 5.5 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Ab
rjk1003dpn-e0.pdf
Preliminary Datasheet RJK1003DPN-E0 R07DS0621EJ0200N-Channel MOS FET Rev.2.00100 V, 50 A, 11 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4. D
rej03g1629 rjk1008dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk1003dpp-e0.pdf
Preliminary Datasheet RJK1003DPP-E0 R07DS0627EJ0200N-Channel MOS FET Rev.2.00100 V, 50 A, 11 m Oct 17, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S23Abs
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
