RJK1003DPN-E0 Specs and Replacement

Type Designator: RJK1003DPN-E0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220AB

RJK1003DPN-E0 substitution

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RJK1003DPN-E0 datasheet

 ..1. Size:74K  renesas
rjk1003dpn-e0.pdf pdf_icon

RJK1003DPN-E0

Preliminary Datasheet RJK1003DPN-E0 R07DS0621EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. D... See More ⇒

 5.1. Size:75K  renesas
rjk1003dpp-e0.pdf pdf_icon

RJK1003DPN-E0

Preliminary Datasheet RJK1003DPP-E0 R07DS0627EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Abs... See More ⇒

 8.1. Size:75K  renesas
rjk1002dpp-e0.pdf pdf_icon

RJK1003DPN-E0

Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200 N-Channel MOS FET Rev.2.00 100 V, 70 A, 7.6 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Ab... See More ⇒

 8.2. Size:120K  renesas
rej03g1627 rjk1008dpnds.pdf pdf_icon

RJK1003DPN-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: RJK0631JPE, RJK0631JPR, RJK0632JPD, RJK0636JPD, RJK0703DPN-E0, RJK0703DPP-E0, RJK1001DPP-E0, RJK1002DPP-E0, AO4468, RJK1003DPP-E0, RJK1008DPP-E0, RJK1206JPD, RJK1209JPE, RJK1525DPJ, RJK1525DPP-M0, RJK1535DPF, RJK1535DPJ

Keywords - RJK1003DPN-E0 MOSFET specs

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