PHX3N50E Specs and Replacement

Type Designator: PHX3N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT186A

PHX3N50E substitution

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PHX3N50E datasheet

 ..1. Size:72K  philips
 phx3n50e.pdf pdf_icon

PHX3N50E

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 A g Isolated package RDS(ON) 3 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan... See More ⇒

 9.1. Size:73K  philips
 phx3n60e.pdf pdf_icon

PHX3N50E

Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 4.4 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

 9.2. Size:63K  philips
 phx3n40e 3.pdf pdf_icon

PHX3N50E

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 3.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

Detailed specifications: PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, IRF640, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E

Keywords - PHX3N50E MOSFET specs

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