RJK1525DPP-M0 MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK1525DPP-M0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-220FL
RJK1525DPP-M0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK1525DPP-M0 Datasheet (PDF)
rjk1525dpp-m0.pdf
Preliminary Datasheet RJK1525DPP-M0 R07DS0966EJ0100150V - 17A - MOS FET Rev.1.00High Speed Power Switching Nov 20, 2012Features Low on-resistance RDS(on) = 0.089 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source
rjk1525dpj.pdf
Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package
rej03g0623 rjk1525dpj.pdf
Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package
rej03g1859 rjk1526dpjds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0510 rjk1529dpk.pdf
Preliminary Datasheet RJK1529DPK REJ03G0510-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item
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