RJK1535DPJ Datasheet and Replacement

Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline LDPAKD 44 41. Gate2. DrainG1 3. Source213 4. Drain231RJK1535DPE23RJK1535DPFSRJK1535DPJAbsolute Maximu

Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline LDPAKD 44 41. Gate2. DrainG1 3. Source213 4. Drain231RJK1535DPE23RJK1535DPFSRJK1535DPJAbsolute Maximu

Preliminary Datasheet RJK1536DPE REJ03G1612-0300N-Channel Power MOSFET Rev.3.00High-Speed Switching Use Jun 30, 2010Features VDSS : 150 V RDS(on) : 30 m (Max) ID : 50 A Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D41. Gate2. Drain3. Source1 G4. Drain123S3Application Motor control, Lighting

Preliminary Datasheet RJK1536DPN REJ03G1594-0300N-Channel Power MOSFET Rev.3.00High-Speed Switching Use Jun 30, 2010Features VDSS : 150 V RDS(on) : 30 m (Max) ID : 50 A Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4. Drain123S3Application Motor control, Solenoid cont

Preliminary Datasheet RJK1560DPP-M0 R07DS0270EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Mar 07, 2011Features Capable of 2.5 V gate drive Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK1576DPA R07DS0855EJ0200150V - 25A - MOS FET Rev.2.00High Speed Power Switching Jan 10, 2013Features Low on-resistance RDS(on) = 0.046 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PWSN0008DE-A(Package name: WPAK(3F))5 6 7 8D D D D86 754 1, 2,

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK1575DPA R07DS0858EJ0200150V - 25A - MOS FET Rev.2.00High Speed Power Switching Jan 08, 2013Features Very low on-resistance RDS(on) = 0.038 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C) Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C) Low leakage current High speed switching Outline

Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package

Preliminary Datasheet RJK1525DPP-M0 R07DS0966EJ0100150V - 17A - MOS FET Rev.1.00High Speed Power Switching Nov 20, 2012Features Low on-resistance RDS(on) = 0.089 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet RJK1590DP3-A0 R07DS1255EJ0100150 V - 1 A - MOS FET Rev.1.00Mar 30, 2015High Speed Power Switching Features Capable of 2.5 V gate drive Low drive current Low on-resistance R = 1.5 typ. (at V = 4 V) DS (on) GSOutline RENESAS Package code: PRSP0004ZB-AD(Package name: SOT-223)41. GateG2. Drain3 3. Source24. Drain1SAbsol

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package

Preliminary Datasheet RJK1529DPK REJ03G0510-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item