RJK4512DPP-E0 MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK4512DPP-E0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
   Package: TO-220FP

RJK4512DPP-E0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK4512DPP-E0 Datasheet (PDF)

..1. Size:94K renesas
rjk4512dpp-e0.pdf

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100450V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1

5.1. Size:88K renesas
rej03g1540 rjk4512dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:78K renesas
r07ds0132ej rjk4518dpk.pdf

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200(Previous: REJ03G1529-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Sep 08, 2010Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga

8.2. Size:206K renesas
rej03g1514 rjk4514dpkds.pdf