RJK5013DPP-E0 Specs and Replacement

Type Designator: RJK5013DPP-E0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.465 Ohm

Package: TO-220FP

RJK5013DPP-E0 substitution

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RJK5013DPP-E0 datasheet

 ..1. Size:80K  renesas
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RJK5013DPP-E0

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source ... See More ⇒

 5.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf pdf_icon

RJK5013DPP-E0

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

 5.2. Size:119K  renesas
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RJK5013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:108K  renesas
r07ds0421ej rjk5012dpp.pdf pdf_icon

RJK5013DPP-E0

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source... See More ⇒

Detailed specifications: RJK4034DJE, RJK4502DJE, RJK4502DPD, RJK4512DPP-E0, RJK4532DPD, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, 8205A, RJK5014DPP, RJK5014DPP-E0, RJK5032DPD, RJK5032DPH-E0, RJK6002DJE, RJK6002DPH-E0, RJK6013DPP-E0, RJK6024DP3-A0

Keywords - RJK5013DPP-E0 MOSFET specs

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