All MOSFET. RJK6013DPP-E0 Datasheet

 

RJK6013DPP-E0 MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK6013DPP-E0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37.5 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO-220FP

RJK6013DPP-E0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK6013DPP-E0 Datasheet (PDF)

1.1. rej03g1535 rjk6013dpeds.pdf Size:89K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. rjk6013dpp-e0.pdf Size:78K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

 Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100 600V - 11A - MOS FET Rev.1.00 High Speed Power Switching Feb 20, 2012 Features  Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source

 4.1. rej03g1752 rjk6015dpmds.pdf Size:91K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. r07ds0131ej rjk6018dpm.pdf Size:51K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

Preliminary Datasheet RJK6018DPM R07DS0131EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Sep 09, 2010 Features ? Low on-resistance RDS(on) = 0.2 ? typ. (at ID = 15 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Ab

 4.3. r07ds0495ej rjk6018dpk.pdf Size:79K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 (Previous: REJ03G1537-0100) 600 V - 30 A - MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low on-resistance RDS(on) = 0.2 ? typ. (at ID = 15 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain (Flang

4.4. rej03g1536 rjk6015dpkds.pdf Size:120K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. rej03g1517 rjk6014dpkds.pdf Size:122K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1577 rjk6011djeds.pdf Size:114K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. r07ds0445ej rjk6012dpe.pdf Size:82K _renesas

RJK6013DPP-E0
RJK6013DPP-E0

Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 (Previous: REJ03G1481-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 17, 2011 Features ? Low on-resistance RDS(on) = 0.77 ? typ. (at ID = 5 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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