All MOSFET. RJL5012DPP Datasheet

 

RJL5012DPP MOSFET. Datasheet pdf. Equivalent

Type Designator: RJL5012DPP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27.8 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO-220FN

RJL5012DPP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJL5012DPP Datasheet (PDF)

1.1. r07ds0419ej rjl5012dpp.pdf Size:99K _renesas

RJL5012DPP
RJL5012DPP

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2

1.2. rjl5012dpp-m0.pdf Size:93K _renesas

RJL5012DPP
RJL5012DPP

 Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)

 1.3. rjl5012dpp.pdf Size:204K _renesas

RJL5012DPP
RJL5012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.4. r07ds0435ej rjl5012dpe.pdf Size:80K _renesas

RJL5012DPP
RJL5012DPP

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous: REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package nam

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top