RJL5013DPP PDF and Equivalents Search

 

RJL5013DPP Specs and Replacement

Type Designator: RJL5013DPP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 150 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm

Package: TO-220FN

RJL5013DPP substitution

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RJL5013DPP datasheet

 ..1. Size:181K  renesas
rjl5013dpp.pdf pdf_icon

RJL5013DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:101K  renesas
r07ds0359ej rjl5013dpe.pdf pdf_icon

RJL5013DPP

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 (Previous REJ03G1755-0100) Silicon N Channel MOS FET Rev.2.00 Apr 18, 2011 High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B ... See More ⇒

 8.1. Size:204K  renesas
rjl5012dpp.pdf pdf_icon

RJL5013DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:93K  renesas
rjl5012dpp-m0.pdf pdf_icon

RJL5013DPP

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

Detailed specifications: RJK6002DJE , RJK6002DPH-E0 , RJK6013DPP-E0 , RJK6024DP3-A0 , RJK6025DPH-E0 , RJK6032DPH-E0 , RJK6036DP3-A0 , RJL5012DPP , K3569 , RJL5014DPP , RJL6012DPP , RJL6013DPP , RJL6014DPP , RJM0404JSC , RJM0603JSC , RJP020N06T100 , RJU002N06FRA .

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