RJL6012DPP
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJL6012DPP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1
Ohm
Package:
TO-220FN
RJL6012DPP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJL6012DPP
Datasheet (PDF)
..1. Size:179K renesas
rjl6012dpp.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:179K renesas
rej03g1750 rjl6012dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:81K renesas
r07ds0437ej rjl6013dpe.pdf
Preliminary Datasheet RJL6013DPE R07DS0437EJ0200(Previous: REJ03G1748-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 16, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE
8.2. Size:181K renesas
rej03g1819 rjl6018dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:181K renesas
rej03g1818 rjl6015dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:198K renesas
rjl6013dpp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:176K renesas
rjl6014dpp.pdf
Preliminary Datasheet RJL6014DPP R07DS0262EJ0200(Previous: REJ03G1853-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Mar 01, 2011Features Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C) Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
