All MOSFET. RJL6012DPP Datasheet

 

RJL6012DPP MOSFET. Datasheet pdf. Equivalent

Type Designator: RJL6012DPP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 28 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-220FN

RJL6012DPP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJL6012DPP Datasheet (PDF)

1.1. rej03g1750 rjl6012dpeds.pdf Size:179K _renesas

RJL6012DPP
RJL6012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. rjl6012dpp.pdf Size:179K _renesas

RJL6012DPP
RJL6012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. rjl6014dpp.pdf Size:176K _update_mosfet

RJL6012DPP
RJL6012DPP

 Preliminary Datasheet RJL6014DPP R07DS0262EJ0200 (Previous: REJ03G1853-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Mar 01, 2011 Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage

4.2. rej03g1819 rjl6018dpkds.pdf Size:181K _renesas

RJL6012DPP
RJL6012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0437ej rjl6013dpe.pdf Size:81K _renesas

RJL6012DPP
RJL6012DPP

Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 (Previous: REJ03G1748-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 16, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.66 ? typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package na

4.4. rej03g1818 rjl6015dpkds.pdf Size:181K _renesas

RJL6012DPP
RJL6012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. rjl6013dpp.pdf Size:198K _renesas

RJL6012DPP
RJL6012DPP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top