RQ1A070ZPTR Specs and Replacement

Type Designator: RQ1A070ZPTR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TSMT8

RQ1A070ZPTR substitution

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RQ1A070ZPTR datasheet

 ..1. Size:226K  rohm
 rq1a070zptr.pdf pdf_icon

RQ1A070ZPTR

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C... See More ⇒

 5.1. Size:227K  rohm
 rq1a070zp.pdf pdf_icon

RQ1A070ZPTR

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C... See More ⇒

 7.1. Size:1197K  rohm
 rq1a070ap.pdf pdf_icon

RQ1A070ZPTR

Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP Structure Dimensions (Unit mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (... See More ⇒

 9.1. Size:650K  rohm
 rq1a060zptr.pdf pdf_icon

RQ1A070ZPTR

RQ1A060ZP Pch -12V -6A Power MOSFET Datasheet lOutline (8) VDSS (7) -12V TSMT8 (6) (5) RDS(on) (Max.) 23mW (1) ID -6A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) -1.5V Drive. (2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode. (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S... See More ⇒

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Detailed specifications: RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, IRFP250, RQ1E050RPTR, RQ3E070BN, RQ3E080BN, RQ3E080GN, RQ3E100BN, RQ3E100GN, RQ3E100MN, RQ3E120AT

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