RQ3E160AD Datasheet and Replacement
Type Designator: RQ3E160AD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
HSMT8
- MOSFET Cross-Reference Search
RQ3E160AD Datasheet (PDF)
..1. Size:2739K rohm
rq3e160ad.pdf 
RQ3E160ADDatasheetNch 30V 16A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 4.5m ID 16A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package.4) Pb-free lead plating ; RoHS co
9.1. Size:2687K rohm
rq3e150bn.pdf
RQ3E150BNDatasheetNch 30V 15A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 5.3m ID 15A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.2. Size:473K rohm
rq3e100gn.pdf
RQ3E100GN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)11.7mWRDS(on) at 4.5V (Max.)15.7mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY
9.3. Size:475K rohm
rq3e150mn.pdf
RQ3E150MN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.7mWRDS(on) at 4.5V (Max.)8.9mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTECTI
9.4. Size:2698K rohm
rq3e180aj.pdf
RQ3E180AJDatasheetNch 30V 18A Middle Power MOSFETlOutlinel HSMT8VDSS 30VRDS(on)(Max.) 4.5m ID 18A PD 2W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package.3) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
9.5. Size:474K rohm
rq3e120gn.pdf
RQ3E120GN Nch 30V 12A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.8mWRDS(on) at 4.5V (Max.)11.8mWID12APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY
9.6. Size:2816K rohm
rq3e130bn.pdf
RQ3E130BNDatasheetNch 30V 13A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 6.0m ID 13A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.7. Size:473K rohm
rq3e150gn.pdf
RQ3E150GN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.1mWRDS(on) at 4.5V (Max.)8.1mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F
9.8. Size:476K rohm
rq3e130mn.pdf
RQ3E130MN Nch 30V 13A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.1mWRDS(on) at 4.5V (Max.)11.6mWID13APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI
9.9. Size:2504K rohm
rq3e120at.pdf
RQ3E120ATDatasheetPch -30V -12A Middle Power MOSFETlOutlinel HSMT8VDSS-30VRDS(on)(Max.) 8.0m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen F
9.10. Size:474K rohm
rq3e180gn.pdf
RQ3E180GN Nch 30V 18A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)4.3mWRDS(on) at 4.5V (Max.)5.5mWID18APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
9.11. Size:2664K rohm
rq3e120bn.pdf
RQ3E120BNDatasheetNch 30V 12A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 9.3m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.12. Size:465K rohm
rq3e100mn.pdf
RQ3E100MN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)12.3mWRDS(on) at 4.5V (Max.)16.8mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTEC
9.13. Size:2665K rohm
rq3e100bn.pdf
RQ3E100BNDatasheetNch 30V 10A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 10.4m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackag
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, CS150N03A8
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
History: WNM2072
| AP9926GEO
| RW1C020UN
| IRF441
| STD4N62K3
| 2SK667
| GSM3050S
Keywords - RQ3E160AD MOSFET datasheet
RQ3E160AD cross reference
RQ3E160AD equivalent finder
RQ3E160AD lookup
RQ3E160AD substitution
RQ3E160AD replacement
