All MOSFET. RQ3E180AJ Datasheet

 

RQ3E180AJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQ3E180AJ
   Marking Code: E180AJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: HSMT8

 RQ3E180AJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQ3E180AJ Datasheet (PDF)

 ..1. Size:2698K  rohm
rq3e180aj.pdf

RQ3E180AJ RQ3E180AJ

RQ3E180AJDatasheetNch 30V 18A Middle Power MOSFETlOutlinel HSMT8VDSS 30VRDS(on)(Max.) 4.5m ID 18A PD 2W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package.3) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 7.1. Size:474K  rohm
rq3e180gn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E180GN Nch 30V 18A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)4.3mWRDS(on) at 4.5V (Max.)5.5mWID18APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

 9.1. Size:2687K  rohm
rq3e150bn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E150BNDatasheetNch 30V 15A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 5.3m ID 15A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi

 9.2. Size:473K  rohm
rq3e100gn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E100GN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)11.7mWRDS(on) at 4.5V (Max.)15.7mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY

 9.3. Size:475K  rohm
rq3e150mn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E150MN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.7mWRDS(on) at 4.5V (Max.)8.9mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTECTI

 9.4. Size:2739K  rohm
rq3e160ad.pdf

RQ3E180AJ RQ3E180AJ

RQ3E160ADDatasheetNch 30V 16A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 4.5m ID 16A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package.4) Pb-free lead plating ; RoHS co

 9.5. Size:474K  rohm
rq3e120gn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E120GN Nch 30V 12A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.8mWRDS(on) at 4.5V (Max.)11.8mWID12APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY

 9.6. Size:2816K  rohm
rq3e130bn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E130BNDatasheetNch 30V 13A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 6.0m ID 13A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi

 9.7. Size:473K  rohm
rq3e150gn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E150GN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.1mWRDS(on) at 4.5V (Max.)8.1mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F

 9.8. Size:476K  rohm
rq3e130mn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E130MN Nch 30V 13A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.1mWRDS(on) at 4.5V (Max.)11.6mWID13APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI

 9.9. Size:2504K  rohm
rq3e120at.pdf

RQ3E180AJ RQ3E180AJ

RQ3E120ATDatasheetPch -30V -12A Middle Power MOSFETlOutlinel HSMT8VDSS-30VRDS(on)(Max.) 8.0m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen F

 9.10. Size:2664K  rohm
rq3e120bn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E120BNDatasheetNch 30V 12A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 9.3m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi

 9.11. Size:465K  rohm
rq3e100mn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E100MN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)12.3mWRDS(on) at 4.5V (Max.)16.8mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTEC

 9.12. Size:2665K  rohm
rq3e100bn.pdf

RQ3E180AJ RQ3E180AJ

RQ3E100BNDatasheetNch 30V 10A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 10.4m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackag

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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