RS1E300GN Specs and Replacement
Type Designator: RS1E300GN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.8 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: HSOP8
RS1E300GN substitution
- MOSFET ⓘ Cross-Reference Search
RS1E300GN datasheet
rs1e300gn.pdf
RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒
rs1e350bn.pdf
RS1E350BN Datasheet Nch 30V 35A Middle Power MOSFET lOutline l HSOP8 VDSS 30V RDS(on)(Max.) 1.7m ID 35A PD 3W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free... See More ⇒
rs1e320gn.pdf
RS1E320GN Nch 30V 32A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 1.9mW RDS(on) at 4.5V (Max.) 2.4mW ID 32A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒
Detailed specifications: RS1E170GN, RS1E200AH, RS1E200BN, RS1E200GN, RS1E240BN, RS1E240GN, RS1E280BN, RS1E280GN, IRFZ44, RS1E320GN, RS1E350BN, RS1G120MN, RS1G150MN, RS1G180MN, RS1G260MN, RS1G300GN, RS3E075AT
Keywords - RS1E300GN MOSFET specs
RS1E300GN cross reference
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RS1E300GN replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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