RS1G180MN Datasheet and Replacement
Type Designator: RS1G180MN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 307 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: HSOP8
RS1G180MN substitution
RS1G180MN Datasheet (PDF)
rs1g180mn.pdf

RS1G180MN Nch 40V 18A Power MOSFET DatasheetlOutlineVDSS40V (8) HSOP8(7) (6) RDS(on) at 10V (Max.)7.0mW(5) RDS(on) at 4.5V (Max.)9.2mW(1) ID (2) 18A(3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.2) High Power Small Mold Package (HSOP8).(1) Source (5) Drain (2) Source (6) Drain 3) Pb-free lead plating ; RoHS compliant(3) Source (7
rs1g120mn.pdf

RS1G120MN Nch 40V 12A Power MOSFET DatasheetlOutlineVDSS40V (8) HSOP8(7) (6) RDS(on) at 10V (Max.)16.2mW(5) RDS(on) at 4.5V (Max.)20.7mW(1) (2) ID12A(3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH
rs1g150mn.pdf

RS1G150MN Nch 40V 15A Power MOSFET DatasheetlOutlineVDSS40V(8) HSOP8(7) (6) RDS(on) at 10V (Max.)10.6mW(5) RDS(on) at 4.5V (Max.)13.3mW(1) ID15A (2) (3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH
Datasheet: RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , IRF630 , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA .
History: NVMTS0D6N04C
Keywords - RS1G180MN MOSFET datasheet
RS1G180MN cross reference
RS1G180MN equivalent finder
RS1G180MN lookup
RS1G180MN substitution
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History: NVMTS0D6N04C



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