RS1G180MN Specs and Replacement
Type Designator: RS1G180MN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 307 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: HSOP8
RS1G180MN substitution
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RS1G180MN datasheet
rs1g180mn.pdf
RS1G180MN Nch 40V 18A Power MOSFET Datasheet lOutline VDSS 40V (8) HSOP8 (7) (6) RDS(on) at 10V (Max.) 7.0mW (5) RDS(on) at 4.5V (Max.) 9.2mW (1) ID (2) 18A (3) (4) PD 3.0W lFeatures lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSOP8). (1) Source (5) Drain (2) Source (6) Drain 3) Pb-free lead plating ; RoHS compliant (3) Source (7... See More ⇒
rs1g120mn.pdf
RS1G120MN Nch 40V 12A Power MOSFET Datasheet lOutline VDSS 40V (8) HSOP8 (7) (6) RDS(on) at 10V (Max.) 16.2mW (5) RDS(on) at 4.5V (Max.) 20.7mW (1) (2) ID 12A (3) (4) PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH... See More ⇒
rs1g150mn.pdf
RS1G150MN Nch 40V 15A Power MOSFET Datasheet lOutline VDSS 40V (8) HSOP8 (7) (6) RDS(on) at 10V (Max.) 10.6mW (5) RDS(on) at 4.5V (Max.) 13.3mW (1) ID 15A (2) (3) (4) PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH... See More ⇒
Detailed specifications: RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , RS1G150MN , IRF640N , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL , RSD050N10FRA .
Keywords - RS1G180MN MOSFET specs
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