RSD201N10 Specs and Replacement

Type Designator: RSD201N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SC-63

RSD201N10 substitution

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RSD201N10 datasheet

 ..1. Size:366K  rohm
 rsd201n10.pdf pdf_icon

RSD201N10

RSD201N10 Nch 100V 20A Power MOSFET Datasheet lOutline VDSS 100V CPT3 (SC-63) RDS(on) (Max.) 46mW (3) ID 20A (2) (1) PD 20W lFeatures lInner circuit (3) 1) Low on-resistance. *1 (1) Gate 2) Fast switching speed. (2) Drain (1) (3) Source 3) Drive circuits can be simple. *2 *1 ESD PROTECTION DIODE 4) Parallel use is easy. *2 BODY DIODE 5) Pb-f... See More ⇒

 0.1. Size:892K  rohm
 rsd201n10fra.pdf pdf_icon

RSD201N10

RSD201N10FRA Nch 100V 20A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 100V CPT3 (SC-63) RDS(on) (Max.) 46mW (3) ID 20A (2) (1) PD 20W lFeatures lInner circuit (3) 1) Low on-resistance. *1 (1) Gate 2) Fast switching speed. (2) Drain (1) (3) Source 3) Drive circuits can be simple. *2 *1 ESD PROTECTION DIODE 4) Parallel use is easy. ... See More ⇒

 9.1. Size:241K  rohm
 rsd200n10.pdf pdf_icon

RSD201N10

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (... See More ⇒

 9.2. Size:1197K  rohm
 rsd200n05.pdf pdf_icon

RSD201N10

Data Sheet 4V Drive Nch MOSFET RSD200N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner circu... See More ⇒

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Detailed specifications: RSD100N10FRA, RSD131P10, RSD131P10FRA, RSD140P06FRA, RSD150N06FRA, RSD160P05FRA, RSD175N10FRA, RSD200N10TL, IRF9540N, RSD201N10FRA, RSD221N06, RSD221N06FRA, RSE002P03TL, RSF010P03TL, RSF014N03TL, RSH065N03TB1, RSH065N06TB1

Keywords - RSD201N10 MOSFET specs

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