RSQ045N03FRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSQ045N03FRA
Marking Code: QL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.8
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package:
TSMT6
RSQ045N03FRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSQ045N03FRA
Datasheet (PDF)
..1. Size:1083K rohm
rsq045n03fra.pdf
RSQ045N03FRA Nch 30V 4.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutline(6) VDSS30VTSMT6 (5) (4) RDS(on) (Max.)38mWID (1) 4.5A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plati
5.1. Size:119K rohm
rsq045n03.pdf
RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
5.2. Size:117K rohm
rsq045n03tr.pdf
RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions ApplicationsAbbreviated symbol : QLSwitching Packaging specifications Inner circuit (6) (5) (4)
5.3. Size:842K cn vbsemi
rsq045n03tr.pdf
RSQ045N03TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
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