RSR025N05FRA Specs and Replacement

Type Designator: RSR025N05FRA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TSMT3

RSR025N05FRA substitution

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RSR025N05FRA datasheet

 ..1. Size:979K  rohm
 rsr025n05fra.pdf pdf_icon

RSR025N05FRA

RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS TSMT3 45V (3) RDS(on) (Max.) 100mW (1) ID 2.5A PD 1.0W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTECTI... See More ⇒

 5.1. Size:1170K  rohm
 rsr025n05.pdf pdf_icon

RSR025N05FRA

Data Sheet 4V Drive Nch MOSFET RSR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Fast switching speed. (1) (2) 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 300... See More ⇒

 6.1. Size:65K  rohm
 rsr025n03.pdf pdf_icon

RSR025N05FRA

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol ... See More ⇒

 6.2. Size:63K  rohm
 rsr025n03tl.pdf pdf_icon

RSR025N05FRA

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol ... See More ⇒

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Detailed specifications: RSR015P03TL, RSR020N06TL, RSR020P03, RSR020P03TL, RSR020P05, RSR020P05FRA, RSR025N03FRA, RSR025N03TL, 8N60, RSR025P03FRA, RSR025P03TL, RSR030N06TL, RSS040P03FU6TB, RSS040P03TB, RSS050P03FU6TB, RSS050P03TB, RSS060P05

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