All MOSFET. RSR030N06TL Datasheet

 

RSR030N06TL MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSR030N06TL
   Marking Code: PY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TSMT3

 RSR030N06TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSR030N06TL Datasheet (PDF)

 ..1. Size:600K  rohm
 rsr030n06tl.pdf

RSR030N06TL RSR030N06TL

RSR030N06 Nch 60V 3A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)85mWID (1) 3APD1W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifica

 5.1. Size:217K  rohm
 rsr030n06.pdf

RSR030N06TL RSR030N06TL

4V Drive Nch MOSFET RSR030N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX2.90.850.4 0.7( ) 3 Features 1) Low On-resistance. ( ) ( )1 22) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9Abbreviated symbol : PY Application Inner circuit (3)Switching Packaging specifications 2Package Taping (1)Type Code TL

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFG75N05E

 

 
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