RSR030N06TL Datasheet and Replacement
Type Designator: RSR030N06TL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TSMT3
RSR030N06TL substitution
RSR030N06TL Datasheet (PDF)
rsr030n06tl.pdf

RSR030N06 Nch 60V 3A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)85mWID (1) 3APD1W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifica
rsr030n06.pdf

4V Drive Nch MOSFET RSR030N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX2.90.850.4 0.7( ) 3 Features 1) Low On-resistance. ( ) ( )1 22) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9Abbreviated symbol : PY Application Inner circuit (3)Switching Packaging specifications 2Package Taping (1)Type Code TL
Datasheet: RSR020P03TL , RSR020P05 , RSR020P05FRA , RSR025N03FRA , RSR025N03TL , RSR025N05FRA , RSR025P03FRA , RSR025P03TL , RU6888R , RSS040P03FU6TB , RSS040P03TB , RSS050P03FU6TB , RSS050P03TB , RSS060P05 , RSS060P05FRA , RSS065N03FU6TB , RSS065N03TB .
History: RUH85350T | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E
Keywords - RSR030N06TL MOSFET datasheet
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History: RUH85350T | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E



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