RSS040P03TB Datasheet and Replacement
Type Designator: RSS040P03TB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOP-8
- MOSFET Cross-Reference Search
RSS040P03TB Datasheet (PDF)
rss040p03fu6tb rss040p03tb.pdf

RSS040P03 Transistors Switching (-30V, -4.0A) RSS040P03 External dimensions (Unit : mm) Features 1) Low On-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0Power switching, DC / DC converter. 0.4Min.Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq
crst045n10n crss042n10n.pdf

CRST045N10N, CRSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
crst049n08n crss046n08n.pdf

CRST049N08N, CRSS046N08N() SkyMOS1 N-MOSFET 85V, 4.1m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.1m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100%
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMK25N80M3 | MTC2804Q8
Keywords - RSS040P03TB MOSFET datasheet
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History: WMK25N80M3 | MTC2804Q8



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