RSS050P03FU6TB Datasheet and Replacement
Type Designator: RSS050P03FU6TB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOP-8
- MOSFET Cross-Reference Search
RSS050P03FU6TB Datasheet (PDF)
rss050p03fu6tb rss050p03tb.pdf

RSS050P03 Transistors Switching (-30V, -5.0A) RSS050P03 External dimensions (Unit : mm) Features 1) Low On-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0Power switching, DC / DC converter. 0.4Min.Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq
crst055n08n crss052n08n.pdf

CRST055N08N, CRSS052N08N() SkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1
crst060n10n crss057n10n.pdf

CRST060N10N, CRSS057N10N() SkyMOS1 N-MOSFET 100V, 5.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STH6NA80FI | IXTV30N50PS | DMN3730U | 2SK566 | STP2N60FI | SFI9Z24 | IXTP16N50PM
Keywords - RSS050P03FU6TB MOSFET datasheet
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History: STH6NA80FI | IXTV30N50PS | DMN3730U | 2SK566 | STP2N60FI | SFI9Z24 | IXTP16N50PM



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