RSS060P05 MOSFET. Datasheet pdf. Equivalent
Type Designator: RSS060P05
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOP-8
RSS060P05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSS060P05 Datasheet (PDF)
rss060p05.pdf
RSS060P05 Transistor 4V Drive Pch MOS FET RSS060P05 Structure External dimensions (Unit : mm) Silicon P-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter , Inverter Packaging
rss060p05fra.pdf
RSS060P05FRARSS060P05TransistorAEC-Q101 Qualified4V Drive Pch MOSFETRSS060P05RSS060P05FRA Structure Dimensions (Unit : mm)Silicon P-channel SOP85.0MOSFET1.750.4(8) (5) Features1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark ApplicationsEach lead has same dimensionsPower switching , DC / DC conv
rss065n06fu6tb.pdf
RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit(8) (7) (6) (5) (8) (7) (6) (5)Package Tapi
rss065n03fu6tb rss065n03tb.pdf
RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 External dimensions (Unit : mm) Features 1) Low on-resistance. ROHM:SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Eq
crst065n08n crss063n08n.pdf
CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
rss065n06.pdf
RSS065N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL
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