All MOSFET. RSS060P05FRA Datasheet

 

RSS060P05FRA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSS060P05FRA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOP-8

 RSS060P05FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSS060P05FRA Datasheet (PDF)

 ..1. Size:967K  rohm
 rss060p05fra.pdf

RSS060P05FRA RSS060P05FRA

RSS060P05FRARSS060P05TransistorAEC-Q101 Qualified4V Drive Pch MOSFETRSS060P05RSS060P05FRA Structure Dimensions (Unit : mm)Silicon P-channel SOP85.0MOSFET1.750.4(8) (5) Features1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark ApplicationsEach lead has same dimensionsPower switching , DC / DC conv

 5.1. Size:584K  rohm
 rss060p05.pdf

RSS060P05FRA RSS060P05FRA

RSS060P05 Transistor 4V Drive Pch MOS FET RSS060P05 Structure External dimensions (Unit : mm) Silicon P-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter , Inverter Packaging

 9.1. Size:97K  rohm
 rss065n06fu6tb.pdf

RSS060P05FRA RSS060P05FRA

RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit(8) (7) (6) (5) (8) (7) (6) (5)Package Tapi

 9.2. Size:57K  rohm
 rss065n03fu6tb rss065n03tb.pdf

RSS060P05FRA RSS060P05FRA

RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 External dimensions (Unit : mm) Features 1) Low on-resistance. ROHM:SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Eq

 9.3. Size:598K  crhj
 crst065n08n crss063n08n.pdf

RSS060P05FRA RSS060P05FRA

CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100

 9.4. Size:850K  cn vbsemi
 rss065n06.pdf

RSS060P05FRA RSS060P05FRA

RSS065N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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