RSS120N03FU6TB Datasheet and Replacement
Type Designator: RSS120N03FU6TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP-8
RSS120N03FU6TB substitution
RSS120N03FU6TB Datasheet (PDF)
rss120n03fu6tb rss120n03tb.pdf

RSS120N03 Transistors Switching (30V, 12A) RSS120N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Equivale
rss125n03fu6tb rss125n03tb.pdf

RSS125N03 Transistors Switching (30V, 12.5A) RSS125N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8) . 3.9(1) Source6.0(2) Source Application (3) SourcePower switching, DC / DC converter. (4) Gate(5) Drain0.4Min.(6 )DrainEach lead has same dimensions(7)
Datasheet: RSS090P03TB , RSS095N05 , RSS100N03FU6TB , RSS100N03TB , RSS105N03FU6TB , RSS105N03TB , RSS110N03FU6TB , RSS110N03TB , IRF840 , RSS120N03TB , RSS125N03FU6TB , RSS125N03TB , RSS130N03FU6TB , RSS130N03TB , RSS140N03TB , RSU002P03T106 , RSY200N05TL .
History: AUIRL2203N | HM60N08 | IRFU15N20D | UTT6NP10G-S08-R | SIA537EDJ | MEM2310M3 | QM2N7002E3K1
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History: AUIRL2203N | HM60N08 | IRFU15N20D | UTT6NP10G-S08-R | SIA537EDJ | MEM2310M3 | QM2N7002E3K1



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