RSU002P03T106 Specs and Replacement
Type Designator: RSU002P03T106
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: UMT3
RSU002P03T106 substitution
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RSU002P03T106 datasheet
rsu002p03t106.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P... See More ⇒
rsu002p03.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P... See More ⇒
rsu002n06.pdf
2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 (SC-70) Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol RK Packaging specifications Inner circuit (3) Package Taping Type Code T106 Basic or... See More ⇒
Detailed specifications: RSS110N03TB, RSS120N03FU6TB, RSS120N03TB, RSS125N03FU6TB, RSS125N03TB, RSS130N03FU6TB, RSS130N03TB, RSS140N03TB, IRF640, RSY200N05TL, RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M
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