All MOSFET. RSU002P03T106 Datasheet

 

RSU002P03T106 Datasheet and Replacement


   Type Designator: RSU002P03T106
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: UMT3
 

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RSU002P03T106 Datasheet (PDF)

 ..1. Size:60K  rohm
 rsu002p03t106.pdf pdf_icon

RSU002P03T106

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P

 5.1. Size:62K  rohm
 rsu002p03.pdf pdf_icon

RSU002P03T106

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P

 8.1. Size:214K  rohm
 rsu002n06.pdf pdf_icon

RSU002P03T106

2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3(SC-70)Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RKPackaging specifications Inner circuit(3)Package TapingTypeCode T106Basic or

Datasheet: RSS110N03TB , RSS120N03FU6TB , RSS120N03TB , RSS125N03FU6TB , RSS125N03TB , RSS130N03FU6TB , RSS130N03TB , RSS140N03TB , IRFP460 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M , RT3J33M , RT3J55M , RT3K11M .

History: RT1A050ZPTR

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