RSU002P03T106 MOSFET. Datasheet pdf. Equivalent
Type Designator: RSU002P03T106
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: UMT3
RSU002P03T106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSU002P03T106 Datasheet (PDF)
rsu002p03t106.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P
rsu002p03.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P
rsu002n06.pdf
2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3(SC-70)Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RKPackaging specifications Inner circuit(3)Package TapingTypeCode T106Basic or
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WM05P01G
