RTR020N05TL Specs and Replacement

Type Designator: RTR020N05TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TSMT3

RTR020N05TL substitution

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RTR020N05TL datasheet

 ..1. Size:53K  rohm
rtr020n05tl.pdf pdf_icon

RTR020N05TL

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated ... See More ⇒

 5.1. Size:55K  rohm
rtr020n05.pdf pdf_icon

RTR020N05TL

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated ... See More ⇒

 5.2. Size:912K  rohm
rtr020n05fra.pdf pdf_icon

RTR020N05TL

RTR020N05 RTR020N05FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR020N05 RTR020N05FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead h... See More ⇒

 8.1. Size:84K  rohm
rtr020p02.pdf pdf_icon

RTR020N05TL

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Application ... See More ⇒

Detailed specifications: RTQ035N03FRA, RTQ035N03TR, RTQ035P02FHA, RTQ035P02TR, RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, TK10A60D, RTR020P02, RTR020P02FRA, RTR020P02TL, RTR025N03FRA, RTR025N03TL, RTR025N05FRA, RTR025N05TL, RTR025P02

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