RTR025P02
MOSFET. Datasheet pdf. Equivalent
Type Designator: RTR025P02
Marking Code: TY
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TSMT3
RTR025P02
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RTR025P02
Datasheet (PDF)
..1. Size:84K rohm
rtr025p02.pdf 
RTR025P02 Transistors 2.5V Drive Pch MOS FET RTR025P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT31.0MAX2) Built-in G-S Protection Diode. 2.90.853) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2)0.95 0.95Power switching, DC / DC converter. 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrev
0.1. Size:955K rohm
rtr025p02fra.pdf
RTR025P02RTR025P02FRATransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR025P02RTR025P02FRA External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT31.0MAX2) Built-in G-S Protection Diode. 2.90.853) Small and Surface Mount Package (TSMT3). 0.4 0.7(3) Application (1) (2)0.95 0.95Power switching, DC / DC converter.0.161.9(1) Gate Each l
0.2. Size:100K rohm
rtr025p02tl.pdf
RTR025P02 Transistors Switching (-20V, -2.5A) RTR025P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT32.90.1 1.0MAX.2) Built-in G-S Protection Diode. Each lead has 0.850.10.4+0.1 same dimensions-0.05 0.70.13) Small and Surface Mount Package (TSMT3). (3) Application 0~0.1Power switching, DC / DC converter. (1) (2) 0.95 0.95+0.1
8.1. Size:55K rohm
rtr025n03.pdf
RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi
8.2. Size:214K rohm
rtr025n05tl.pdf
2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application
8.3. Size:216K rohm
rtr025n05.pdf
2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application
8.4. Size:913K rohm
rtr025n03fra.pdf
RTR025N03FRARTR025N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR025N03FRARTR025N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead ha
8.5. Size:53K rohm
rtr025n03tl.pdf
RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi
8.6. Size:1056K rohm
rtr025n05fra.pdf
AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbo
8.7. Size:1451K cn vbsemi
rtr025n05t.pdf
RTR025N05Twww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
8.8. Size:895K cn vbsemi
rtr025n03tl.pdf
RTR025N03TLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
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