All MOSFET. RTR025P02FRA Datasheet

 

RTR025P02FRA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RTR025P02FRA
   Marking Code: TY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TSMT3

 RTR025P02FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RTR025P02FRA Datasheet (PDF)

 ..1. Size:955K  rohm
 rtr025p02fra.pdf

RTR025P02FRA RTR025P02FRA

RTR025P02RTR025P02FRATransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR025P02RTR025P02FRA External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT31.0MAX2) Built-in G-S Protection Diode. 2.90.853) Small and Surface Mount Package (TSMT3). 0.4 0.7(3) Application (1) (2)0.95 0.95Power switching, DC / DC converter.0.161.9(1) Gate Each l

 5.1. Size:84K  rohm
 rtr025p02.pdf

RTR025P02FRA RTR025P02FRA

RTR025P02 Transistors 2.5V Drive Pch MOS FET RTR025P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT31.0MAX2) Built-in G-S Protection Diode. 2.90.853) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2)0.95 0.95Power switching, DC / DC converter. 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrev

 5.2. Size:100K  rohm
 rtr025p02tl.pdf

RTR025P02FRA RTR025P02FRA

RTR025P02 Transistors Switching (-20V, -2.5A) RTR025P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT32.90.1 1.0MAX.2) Built-in G-S Protection Diode. Each lead has 0.850.10.4+0.1 same dimensions-0.05 0.70.13) Small and Surface Mount Package (TSMT3). (3) Application 0~0.1Power switching, DC / DC converter. (1) (2) 0.95 0.95+0.1

 8.1. Size:55K  rohm
 rtr025n03.pdf

RTR025P02FRA RTR025P02FRA

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi

 8.2. Size:214K  rohm
 rtr025n05tl.pdf

RTR025P02FRA RTR025P02FRA

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application

 8.3. Size:216K  rohm
 rtr025n05.pdf

RTR025P02FRA RTR025P02FRA

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application

 8.4. Size:913K  rohm
 rtr025n03fra.pdf

RTR025P02FRA RTR025P02FRA

RTR025N03FRARTR025N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR025N03FRARTR025N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead ha

 8.5. Size:53K  rohm
 rtr025n03tl.pdf

RTR025P02FRA RTR025P02FRA

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi

 8.6. Size:1056K  rohm
 rtr025n05fra.pdf

RTR025P02FRA RTR025P02FRA

AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbo

 8.7. Size:1451K  cn vbsemi
 rtr025n05t.pdf

RTR025P02FRA RTR025P02FRA

RTR025N05Twww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 8.8. Size:895K  cn vbsemi
 rtr025n03tl.pdf

RTR025P02FRA RTR025P02FRA

RTR025N03TLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top