RV3C002UN MOSFET Datasheet: N-Ch, 20V, 0.15A. Full specification with pinout and replacement list

RV3C002UN Specs and Replacement

Type Designator: RV3C002UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: VML0604

RV3C002UN substitution

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RV3C002UN datasheet

..1. Size:589K rohm
rv3c002un.pdf pdf_icon

TENTATIVE RV3C002UN Nch 20V 150mA Small Signal MOSFET Data Sheet lOutline VDSS 20V VML0604 RDS(on) (Max.) 2.0W ID 150mA PD 100mW lInner circuit lFeatures (1) Gate 1) Ultra Small Package (0.6 0.4 0.36mm) (2) Source 2) Low voltage drive (1.2V) makes this (3) Drain device ideal for partable equipment. *1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can be s... See More ⇒

8.1. Size:633K rohm
rv3c001zp.pdf pdf_icon

TENTATIVE RV3C001ZP Pch -20V -100mA Small Signal MOSFET Data Sheet lOutline VDSS -20V VML0604 RDS(on) (Max.) 3.8W ID -100mA PD 100mW lInner circuit lFeatures (1) Gate 1) Ultra Small Package (0.6 0.4 0.36mm) (2) Source 2) Low voltage drive (-1.2V) makes this (3) Drain device ideal for partable equipment. *1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can ... See More ⇒

Detailed specifications: RTR040N03TL, RTU002P02T106, RV1C001ZP, RV1C002UN, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, IRF1405, RVQ040N05TR, RW1C026ZP, RZE002P02TL, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR