All MOSFET. RV3C002UN Datasheet

 

RV3C002UN Datasheet and Replacement


   Type Designator: RV3C002UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: VML0604
 

 RV3C002UN substitution

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RV3C002UN Datasheet (PDF)

 ..1. Size:589K  rohm
 rv3c002un.pdf pdf_icon

RV3C002UN

TENTATIVERV3C002UN Nch 20V 150mA Small Signal MOSFET Data SheetlOutlineVDSS20V VML0604RDS(on) (Max.)2.0WID150mAPD100mWlInner circuitlFeatures(1) Gate 1) Ultra Small Package (0.60.40.36mm) (2) Source 2) Low voltage drive (1.2V) makes this(3) Drain device ideal for partable equipment.*1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can be s

 8.1. Size:633K  rohm
 rv3c001zp.pdf pdf_icon

RV3C002UN

TENTATIVERV3C001ZP Pch -20V -100mA Small Signal MOSFET Data SheetlOutlineVDSS-20V VML0604RDS(on) (Max.)3.8WID-100mAPD100mWlInner circuitlFeatures(1) Gate 1) Ultra Small Package (0.60.40.36mm) (2) Source 2) Low voltage drive (-1.2V) makes this (3) Drain device ideal for partable equipment.*1 BODY DIODE *2 ESD PROTECTION DIODE 3) Drive circuits can

Datasheet: RTR040N03TL , RTU002P02T106 , RV1C001ZP , RV1C002UN , RV2C001ZP , RV2C002UN , RV2C010UN , RV3C001ZP , IRF1405 , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR , RZM001P02 , RZQ045P01TR .

History: RUH3025M3

Keywords - RV3C002UN MOSFET datasheet

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