PMBFJ310 MOSFET. Datasheet pdf. Equivalent

   Type Designator: PMBFJ310
   Marking Code: M10
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 0.06 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT23

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PMBFJ310 Datasheet (PDF)

..1. Size:68K philips
pmbfj308 pmbfj309 pmbfj310 2.pdf pdf_icon

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

8.1. Size:98K philips
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9.1. Size:32K philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

9.2. Size:100K philips
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DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

9.3. Size:47K philips
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PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

9.4. Size:31K philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

9.5. Size:32K philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

9.6. Size:67K philips
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PMBFJ620Dual N-channel field-effect transistorRev. 01 11 May 2004 Product data sheet1. Product profile1.1 General descriptionTwo N-channel symmetrical junction field-effect transistors in a SOT363 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2 Features Two field effect tran

9.7. Size:228K philips
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DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

9.8. Size:46K philips
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PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

9.9. Size:223K nxp
pmbfj620.pdf pdf_icon

PMBFJ620Dual N-channel field-effect transistorRev. 3 6 March 2014 Product data sheet1. Product profile1.1 General descriptionTwo N-channel symmetrical junction field-effect transistors in a SOT363 package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.Such precautions are described in the A

9.10. Size:57K nxp
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Datasheet: PMBFJ111 , PMBFJ112 , PMBFJ113 , PMBFJ210 , PMBFJ211 , PMBFJ212 , PMBFJ308 , PMBFJ309 , K4145 , PN4391 , PN4392 , PN4393 , PN4416 , PN4416A , PSMN003-25W , RF1K49086 , RF1K49088 .

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PMBFJ310 MOSFET. Datasheet pdf. Equivalent

PMBFJ310 Datasheet (PDF)

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