SIR158DP Specs and Replacement
Type Designator: SIR158DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 87 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 915 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: SO-8
SIR158DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR158DP datasheet
sir158dp.pdf
SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET gen III power MOSFET VDS (V) RDS(on) ( )ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested 0.00180 at VGS = 10 V 60 g 30 41.5 nC Material categorization 0.00230 at VGS = 4.5 V 60 g For definitions of compliance please see PowerPAK SO-8 Single www.vishay.com/doc?9991... See More ⇒
Detailed specifications: SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, IRF540, SIR166DP, SIR168DP, SIR172ADP, SIR172DP, SIR316DP, SIR330DP, SIR401DP, SIR402DP
Keywords - SIR158DP MOSFET specs
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