All MOSFET. SIR158DP Datasheet

 

SIR158DP Datasheet and Replacement


   Type Designator: SIR158DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 915 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: SO-8
 

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SIR158DP Datasheet (PDF)

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SIR158DP

SiR158DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET gen III power MOSFETVDS (V) RDS(on) ()ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.00180 at VGS = 10 V 60 g30 41.5 nC Material categorization:0.00230 at VGS = 4.5 V 60 gFor definitions of compliance please seePowerPAK SO-8 Single www.vishay.com/doc?9991

Datasheet: SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP , IRF540N , SIR166DP , SIR168DP , SIR172ADP , SIR172DP , SIR316DP , SIR330DP , SIR401DP , SIR402DP .

History: 8N80L-TF1-T | AOB292L | IXFH150N15P

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