SIR330DP Datasheet and Replacement
Type Designator: SIR330DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SO-8
SIR330DP substitution
SIR330DP Datasheet (PDF)
sir330dp.pdf
New ProductSiR330DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 11.2 nC0.0075 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK
Datasheet: SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , SIR172DP , SIR316DP , IRFB4110 , SIR401DP , SIR402DP , SIR403EDP , SIR404DP , SIR406DP , SIR408DP , SIR410DP , SIR412DP .
History: DMG1013UW | OSG60R380PF
Keywords - SIR330DP MOSFET datasheet
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History: DMG1013UW | OSG60R380PF
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