SIR330DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR330DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 22.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm
Package: SO-8
SIR330DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR330DP Datasheet (PDF)
..1. Size:505K vishay
sir330dp.pdf
sir330dp.pdf
New ProductSiR330DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 11.2 nC0.0075 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK
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